Application of Plasma Processes to Amorphous Semiconductors

Defects in Amorphous Semiconductors: Amorphous Silicon

Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...

Spin Injection into Amorphous Semiconductors

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs.

Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV...

The Theory of Transport in Amorphous Semiconductors

The theory of transport in disordered systems is approached using the Master equation point of view. Emphasis is laid on a microscopic interpretation. An approximate selfconsistent theory is presented with which it is possible to evaluate hopping d.c and a.c conductivity and Hall mobility. The theory is compared with computer simulations and experiments on amorphous semiconductors. The method i...

Atomic structure of pressure-induced amorphous semiconductors

The paper will briefly review and discuss results of our investigations on the atomic correlations in amorphous Zn-Sb, GaSb, GaSb-Ge and Al-Ge alloys. These semiconductor alloys were prepared by solid state reactions in the course of heating the quenched highpressure phases. Structure of the final products was studied by neutron diffraction for the Al-Ge, GaSb and GaSb-Ge alloys and by transmis...